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A high order curvature-compensated CMOS bandgap voltage reference(BGR) is presented in TSMC 0.35μm CMOS technology with low power low temperature-coefficient(TC) and high power supply rejection ratio(PSRR). The design is used in low dropout regulators which is applied in implanted chips. TC is compensated by adjusting resistor ratio which have different temperature characteristics. A PSRR enhance...
The limits of the current electronic solutions restrict the use in harsh environments especially in high temperature (>300 °C). SiC is a material, which allows exceeding these physical constraints. AMPERE laboratory have developed SiC integrated circuits based on lateral MESFETs. This paper presents the first steps of the development of smart integrated driver circuit dedicated to harsh environments.
This paper presents a high-frequency half-bridge driver for GaN HEMTs with bandgap reference comparator clamping (BGRCC). Due to the characteristics of GaN HEMTs, the high-side supply voltage must be clamped to prevent it from exceeding the voltage limits in half-bridge configuration. The BGRCC scheme is simple and effective with low power consumption, which can adaptively keep the high-side supply...
In this work the idea of graded band gap design in intrinsic-layer is simulated and studied numerically. We study our device model (p-GaN/ i-Ga1−xInxN /n-InN) by using AMPS-1D. The device performance is calculated by transport equations. Effect of series resistance is presented. It has been found that the use of the graded gap in intrinsic region can improve the performance of the GaN/InN solar cell.
Two gallium oxide (Ga2O3) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide...
This paper presents a Cylindrical GAA TFET based on germanium source for low power applications. The proposed device used the merits of low band gap material such as germanium, which is used as a material in the source region. Device investigations have been made in terms of DC characteristics like ION, IOFF, SS, ION/IOFF. The proposed device increases ON-current as high as 1.9 × 10−5 A/μm, which...
Structural, Electronic and optical properties of ternary chalcopyrite BeSiP2 were studied using the first principles density functional calculations performed in the full potential linear augmented plane wave (FP-LAPW) method as implemented in the WIEN2k code. In this approach the Tran-Blaha modified Becke-Johnson potential (TB-mBJ) is used for the exchange-correlation (XC) potential. Results are...
A 2 × VDD output buffer with process, voltage and leakage compensation technique is proposed to keep slew rate (SR) self-adjusted within predefined ranges regardless PV variations. Low Vth (threshdold voltage) transistors are employed in the stacked driving transistor strings to boost the driving current. On the other hand, a leakage detection loop is added at the gate drives of these low Vth transistors...
The U.S. Department of Energy's Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced...
The short length and graded gap of InGaAs-based diodes with impact ionization are considered. Diode peculiarity is defined by usage region with varying composition. The analysis of diodes operation is performed by Monte Carlo technique. Influence of doping and composition profile on current-voltage characteristic of diode is investigated. The possibility of same direct motion of both types of charge...
An op-ampless second-order compensated bandgap reference with low temperature coefficient is proposed in this paper. The bandgap is second-order curvature-compensated by the temperature coefficient of the threshold voltage of a MOSFET. Simulated by Spectre, the output reference voltage is 1.102V with a 2.7ppm temperature coefficient from −40 °C to 160 °C and a −60dB PSRR at low frequency. The current...
A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.
High-bandgap offset 1300nm InAlGaAs quantum well (QW) has been used for electroabsorption modulator. High conduction/valance bandgap offset ratio allows strong exciton effect under high electric field, leading to broadband operation. >10dB extinction ratio from 1280nm to 1320nm and 40GHz of electical-to-optical response has been demonstrated.
A novel passively mode-locked quantum-well laser, which saturable absorber (SA) has gradually varied bandgap, is fabricated. Light pulses are obtained at a repetition frequency of 226 GHz with a minimum pulse width of 605 fs under an appropriate mono current bias.
The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter rHOM=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.
By using first-principles calculations, the electronic properties and chemical activity of phosphorene under the strain and defect engineering are studied. Furthermore, the effects of engineering on the interactions of NO gas molecule and humidity (H2O) and air (O2) molecules with the phosphorene surface are investigated. It is found that phosphorene enables to withstand a large compressive strain,...
We present an experimental and numerical simulation analysis of the spectral properties of two-dimensional photonic band gap (PBG) wire structure with a spatial defect in the millimeter waveband. The localized defective modes are experimentally detected in the band gap transmission spectrum of 2D PBG wire structure. The quality factor and radiation pattern of the defect modes and their dependence...
A power-on-reset (POR) circuit, which is an important block in mixed-signal integrated circuits, is used for the correct initialization of critical logic states in digital blocks of mixed-signal circuits. A POR circuit with precisely triggered threshold voltages is proposed. The circuit is designed in a 0.18 μm CMOS technology with a maximum 4 μA quiescent current. The output signal of the proposed...
The environment-friendly perovskite solar cell materials CH3NH3PbI2.75Cl0.25 was investigated by using the CASTEP software package in Materials Studio (MS) software. For the CH3NH3PbI3 cell, six kinds of the structure and physical properties of the I anion replaced by one Cl anion were built and calculated. Firstly, the geometrical optimization and energy optimization of the six kinds of configurations...
First-Principle analysis of the band structures for dilute-anion BN-based semiconductor was performed, and the findings indicated a direct bandgap properties of this alloy in deep ultraviolet regime as compared to the indirect band gap BN alloy.
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